The MOCVD facility at SFU includes two machines. The most recent is a high speed rotating disk system manufacturing by Structured Materials optimized for the growth of gallium nitride (GaN) and related materials.
A second system consists of a horizontal reactor geometry dedicated to the growth of oxide materials such as ZnO and related semiconductors for potential quantum information applications.
A wide range of characterization tools including high resolution XRD, atomic force microscopy, SEM, TEM, low temperature photoluminescence, and various electrical characterization techniques are available.